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Preliminary Technical Information
TrenchMV TM Power
MOSFET
( Electrically Isolated Back Surface)
IXTF200N10T
V DSS
I D25
R DS(on)
= 100V
= 90A
≤ 7m Ω
N-Channel Enhancement Mode
Avalanche Rated
ISOPLUS i4-Pak TM (5-lead)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSM
I D25
I DM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
100
100
± 30
90
500
V
V
V
A
A
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
40
1.5
156
A
J
W
G
S
S
D
D
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
G = Gate
S = Source
D = Drain
T L
V ISOL
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
50/60Hz, t = 1 minute, I ISOL < 1mA, RMS
Mounting Force
300
260
2500
120..120 / 4.5..27
6
° C
° C
V
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Avalanche Rated
2500V Electrical Isolation
Advantages
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Applications
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 50A , Notes 1
T J = 150 ° C
100
2.5
4.5
± 200
5
250
7
V
V
nA
μ A
μ A
m Ω
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary - Side Switch
High Current Switching Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS99747B(03/09)
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